11N65C3
11N65C3 is SPP11N65C3 manufactured by Infineon.
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
- Improved transconductance
P-TO220-3-31
1 2 3
VDS RDS(on) ID
P-TO262-3-1 P-TO220-3-31
650 0.38 11
V Ω A
P-TO220-3-1
Type SPP11N65C3 SPA11N65C3 SPI11N65C3
Package P-TO220-3-1 P-TO262-3-1
Ordering Code Q67040-S4557 Q67040-S4561
Marking 11N65C3 11N65C3 11N65C3
P-TO220-3-31 Q67040-S4554
Maximum Ratings Parameter Symbol ID Value SPP_I SPA Unit
Continuous drain current
TC = 25 °C TC = 100 °C
A 11 7 11 1) 71) 33 340 0.6 4 ±20
±30
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=2.5A, VDD=50V
ID puls EAS EAR IAR VGS VGS Ptot
33 340 0.6 4 ±20
±30
A m J
Avalanche energy, repetitive t AR limited by Tjmax2)
ID=4A, VDD =50V
Avalanche current, repetitive t AR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage...
