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Infineon Technologies Electronic Components Datasheet

11N65C3 Datasheet

SPP11N65C3

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SPP11N65C3, SPA11N65C3
SPI11N65C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
Improved transconductance
VDS
RDS(on)
ID
650 V
0.38
11 A
P-TO262-3-1 P-TO220-3-31 P-TO220-3-1
P-TO220-3-31
3
12
Type
SPP11N65C3
SPA11N65C3
SPI11N65C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4557
P-TO220-3-31 Q67040-S4554
P-TO262-3-1 Q67040-S4561
Marking
11N65C3
11N65C3
11N65C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=2.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=4A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_I
SPA
11 111)
7 71)
33 33
340 340
Unit
A
A
mJ
0.6 0.6
44
±20 ±20
±30 ±30
125 33
-55...+150
A
V
W
°C
Page 1
2003-08-15


Infineon Technologies Electronic Components Datasheet

11N65C3 Datasheet

SPP11N65C3

No Preview Available !

www.datasheet4u.com
SPP11N65C3, SPA11N65C3
SPI11N65C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s 4)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
RthJA
Tsold
min.
-
-
-
-
Values
typ. max.
-1
- 3.8
- 62
- 80
Unit
K/W
- - 62
- 35 -
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=4A
650 5)
-
-
730
-
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
IDSS
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
Gate input resistance
RG
ID=500µA, VGS=VDS
VDS=600V, VGS=0V,
Tj=25°C
Tj=150°C
VGS=20V, VDS=0V
VGS=10V, ID=7A
Tj=25°C
Tj=150°C
f=1MHz, open drain
2.1
-
-
-
-
-
-
3 3.9
0.1 1
- 100
- 100
0.34
0.92
0.86
0.38
-
-
Unit
V
µA
nA
Page 2
2003-08-15


Part Number 11N65C3
Description SPP11N65C3
Maker Infineon Technologies
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11N65C3 Datasheet PDF






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