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Infineon Technologies Electronic Components Datasheet

BAS3010B Datasheet

Medium Power AF Schottky Diode

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Medium Power AF Schottky Diode
Forward current: 1 A
Reverse voltage: 30 V
Low forward voltage, low reverse current
For high efficiency DC/DC conversion,
fast switching, protection and
clamping applications
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BAS3010B...
BAS3010B-03W

Type
BAS3010B-03W
Package
SOD323
Configuration
single
Marking
2/ red
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage2)
Forward current2)
VR
IF
Average rectified forward current (50/60Hz, sinus) IFAV
Repetitive peak forward current
(tp 1 ms, D 0.5)
I FRM
Non-repetitive peak surge forward current
(t 10 ms)
I FSM
Value
30
1
1
3.5
10
Unit
V
A
Junction temperature
Tj 150
Operating temperature range
Top -65 ... 125
www.DSattoaSrahegeet4Ute.cmomperature
Tstg -65 ... 150
1Pb-containing package may be available upon special request
2 For TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves.
°C
1 2007-04-19


Infineon Technologies Electronic Components Datasheet

BAS3010B Datasheet

Medium Power AF Schottky Diode

No Preview Available !

BAS3010B...
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
82
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current2)
IR
VR = 5 V
--5
VR = 10 V
- - 10
VR = 30 V
- - 20
Forward voltage2)
VF
IF = 1 mA
- 230 280
IF = 10 mA
- 300 350
IF = 100 mA
- 360 420
IF = 500 mA
- 420 480
IF = 1 A
- 480 550
Unit
µA
mV
AC Characteristics
Diode capacitance
CT -
VR = 5 V, f = 1 MHz
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulsed test: tp = 300 µs; D = 0.01
33 40 pF
www.DataSheet4U.com
2 2007-04-19


Part Number BAS3010B
Description Medium Power AF Schottky Diode
Maker Infineon Technologies
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BAS3010B Datasheet PDF






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