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Infineon Technologies Electronic Components Datasheet

BAS3010S Datasheet

Low VF Schottky Diode

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Low VF Schottky Diode
Forward current: 1 A
Reverse voltage: 30 V
Low forward voltage and smallest package
form factor (1.0 x 0.6 x < 0.4 mm) for
mobile phone battery charger application
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BAS3010S...
BAS3010S-03LRH
2
3
1
Type
BAS3010S-03LRH*
* Preliminary data
Package
TSLP-3-7
Configuration
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage2)
Forward current2)3)
Repetitive peak forward current3)
(tp 1 ms, D 0.25)
Non-repetitive peak surge forward current3)
(t 10 ms)
VR
IF
IFRM
IFSM
Junction temperature
Tj
Operating temperature range
Top
www.DSattoaSrahegeet4Ute.cmomperature
Tstg
1Pb-containing package may be available upon special request
2For TA > 25°C the derating of VR and IF has to be considered.
3Only valid if pin 1 and 2 are connected in parallel
Marking
1S
Value
30
1
3.5
5
150
-55 ... 125
-65 ... 150
Unit
V
A
°C
1 2007-08-16


Infineon Technologies Electronic Components Datasheet

BAS3010S Datasheet

Low VF Schottky Diode

No Preview Available !

BAS3010S...
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
38
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current2)
IR - - -
VR = 5 V
- - 15
VR = 10 V
- - 30
VR = 30 V
- - 300
Forward voltage2)
VF - - -
IF = 100 mA
- 340 390
IF = 350 mA
- 400 450
IF = 1000 mA
- 570 650
Unit
µA
mV
AC Characteristics
Diode capacitance
CT -
VR = 5 V, f = 1 MHz
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulsed test: tp = 300 µs; D = 0.01
10 15 pF
www.DataSheet4U.com
2 2007-08-16


Part Number BAS3010S
Description Low VF Schottky Diode
Maker Infineon Technologies
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BAS3010S Datasheet PDF






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