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BSC0901NSI - n-Channel Power MOSFET

General Description

OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions.

Key Features

  • Optimized SyncFET for high performance buck converters 100% avalanche tested Very low on-resistance RDS(on) @ VGS=4.5 V N-channel Qualified according to JEDEC1) for target.

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Full PDF Text Transcription for BSC0901NSI (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BSC0901NSI. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com n-Channel Power MOSFET OptiMOS™ BSC0901NSI Data Sheet 2.0, 2011-03-29 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSC0901NSI 1 Description Op...

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strial & Multimarket OptiMOS™ Power-MOSFET BSC0901NSI 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in.

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