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BSC0909NS - N-Channel Power MOSFET

Datasheet Summary

Description

OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions.

Features

  • Optimized for high performance Buck converter 100% avalanche tested Very low on-resistance RDS(on) @ VGS=4.5 V Ultra low gate (Qg) and output charge (Qoss) for given RDS(on) Qualified according to JEDEC1) for target.

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Datasheet Details

Part number BSC0909NS
Manufacturer Infineon Technologies
File Size 1.51 MB
Description N-Channel Power MOSFET
Datasheet download datasheet BSC0909NS Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com n -C hannel Pow er MO S FET OptiMOS™ BSC0909NS D at a S heet 3.1, 2010-10-18 Final I ndus t ri al & M ul t i m ark et OptiMOS™ Power-MOSFET BSC0909NS 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice forthe demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in.
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