BSC0909NS Datasheet | Infineon

.. n -C hannel Pow er MO S FET Opti MOS™ BSC0909NS D at a S heet 3.1, 2010-10-18 Final I ndus t ri al & M ul t i m ark et Opti MOS™ Power-MOSFET BSC0909NS Description Opti MOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make Opti MOS™ 30V the best choice forthe demanding requirements of voltage regulator solutions in Servers, Data and Tele applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Opti MOS™ products are available in high performancepackages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost. Opti MOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in puting applications Features - - - - - - - - Optimized for high performance Buck converter 100% avalanche tested Very low on-resistance RDS(on) @ VGS=4.5 V Ultra low gate (Qg) and output charge (Qoss) for given RDS(on) Qualified according to JEDEC1) for target applications Superior thermal resistance Pb-free plating; Ro HS pliant Halogen-free according to IEC61249-2-21 Applications - - - - On board power for server Power managment for high performance puting Synchronous rectification High power density point of load converters Table 1 Parameter Key Performance Parameters Value 34 9.2 44 10 7.3 Unit V m# A n C n C Related Links IFX Opti MOS webpage IFX Opti MOS product brief IFX Opti MOS spice models IFX Design tools RDS(on),max QOSS Qg.typ Type BSC0909NS Package PG-TDSON-8 Marking 0909NS 1) J-STD20 and JESD22 Final Data Sheet 3.1, 2010-10-18 Opti MOS™ Power-MOSFET BSC0909NS Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Parameter...