BSC0901NSI Datasheet | Infineon

.. n-Channel Power MOSFET Opti MOS™ BSC0901NSI Data Sheet 2.0, 2011-03-29 Final Industrial & Multimarket Opti MOS™ Power-MOSFET BSC0901NSI Description Opti MOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Opti MOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in Servers, Data and Tele applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Opti MOS™ products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space, efficiency and cost. Opti MOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in puting applications Features - - - - - - - - - Optimized Sync FET for high performance buck converters 100% avalanche tested Very low on-resistance RDS(on) @ VGS=4.5 V N-channel Qualified according to JEDEC1) for target applications Superior thermal resistance Pb-free plating; Ro HS pliant Halogen-free according to IEC61249-2-21 Integrated monolithic Schottky-like diode Applications - - - - On board power for server Power managment for high performance puting Synchronous rectification High power density point of load converters Table 1 Parameter Key Performance Parameters Value 30 2 100 28 41 Unit V mΩ A n C Related Links IFX Opti MOS webpage IFX Opti MOS product brief IFX Opti MOS spice models IFX Design tools RDS(on),max QOSS Qg.typ Type BSC0901NSI Package PG-TDSON-8 Marking 0901NSI 1) J-STD20 and JESD22 Final Data Sheet 2.0, 2011-03-29 Opti MOS™ Power-MOSFET BSC0901NSI Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Parameter Continuous drain...