Datasheet4U Logo Datasheet4U.com

BSC0909NS - N-Channel Power MOSFET

General Description

OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions.

Key Features

  • Optimized for high performance Buck converter 100% avalanche tested Very low on-resistance RDS(on) @ VGS=4.5 V Ultra low gate (Qg) and output charge (Qoss) for given RDS(on) Qualified according to JEDEC1) for target.

📥 Download Datasheet

Full PDF Text Transcription for BSC0909NS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BSC0909NS. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com n -C hannel Pow er MO S FET OptiMOS™ BSC0909NS D at a S heet 3.1, 2010-10-18 Final I ndus t ri al & M ul t i m ark et OptiMOS™ Power-MOSFET BSC0909NS ...

View more extracted text
al I ndus t ri al & M ul t i m ark et OptiMOS™ Power-MOSFET BSC0909NS 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice forthe demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in.

More Datasheets from Infineon

Part Number Description
BSC0901NS N-Channel Power MOSFET
BSC0901NSI n-Channel Power MOSFET
BSC0902NS 30V MOSFET
BSC0904NSI 30V Power MOSFET
BSC0908NS N-Channel Power MOSFET
BSC090N03LSG Power-MOSFET
BSC090N03MSG Power-MOSFET
BSC093N04LSG Power-MOSFET
BSC094N03SG Power-MOSFET
BSC014N06NS Power-Transistor