BSC600N25NS3
Description
Sheet 2 Rev.2.5,2022-11-09 OptiMOSTM3Power-Transistor,250V BSC600N25NS3G 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Pulsed drain current1) Avalanche energy, single pulse Reversediodedv/dt Gate source voltage Power dissipation Operating and storage temperature ID ID,pulse EAS dv/dt VGS Ptot Tj,Tstg Min.
Key Features
- N-channel,normallevel
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- Pb-freeleadplating;RoHSpliant
- QualifiedaccordingtoJEDEC1)fortargetapplication
- Halogen-freeaccordingtoIEC61249-2-21
