IDW30G65C5 Datasheet - Infineon Technologies

SiC Schottky Barrier diodes

IDW30G65C5 Features

* Revolutionary semiconductor material - Silicon Carbide

* Benchmark switching behavior

* No reverse recovery/ No forward recovery

* Temperature independent switching behavior

* High surge current capability

* Pb-free lead plating; RoHS compliant

* Qualified according to

IDW30G65C5 General Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics a.

IDW30G65C5 Datasheet (1.14 MB)

IDW30G65C5 Datasheet Preview — Preview of IDW30G65C5 PDF

Datasheet Details

Part number:

IDW30G65C5

Manufacturer:

Infineon ↗ Technologies

File Size:

1.14 MB

Description:

Sic schottky barrier diodes.
SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW30G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimark.

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IDW30G65C5 SiC Schottky Barrier diodes Infineon Technologies

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IDW30G65C5 Features

IDW30G65C5 General Description

Datasheet Details

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Description:

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