IGW50N65H5A - IGBT

Description

Features

High speed H5 technology offering.
Best-in-Class efficiency in hard switching and resonant topologies.
Plug and play replacement of previous generation IGBTs.
650V breakdown voltage.
Low gate charge QG.
Maximum junction temperature 175°C.
Qualified according to AEC-Q101.
Green package (RoHS compliant).
Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/.

Infineon

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Datasheet Details

Part number	IGW50N65H5A
Manufacturer	Infineon
File Size	1.89 MB
Description	IGBT
Datasheet	IGW50N65H5A Datasheet

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Full PDF Text Transcription

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IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technology IGW50N65H5A 650VIGBT Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IGW50N65H5A Highspeedswitchingseriesfifthgeneration Highspeed5FASTIGBTinTRENCHSTOPTM5technology FeaturesandBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoAEC-Q101 •Greenpackage(RoHScompliant) •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: Mar 14, 2015 |