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IKW75N65EL5 - IGBT

General Description

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Key Features

  • C Low VCE(sat) L5 technology offering.
  • Very low collector-emitter saturation voltage VCEsat.
  • Best-in-Class tradeoff between conduction and switching losses.
  • 650V breakdown voltage.
  • Low gate charge QG.
  • Maximum junction temperature 175°C.
  • Qualified according to JEDEC for target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT LowVCE(sat)IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKW75N65EL5 650VDuoPackIGBTanddiode LowVCE(sat)seriesfifthgeneration Datasheet IndustrialPowerControl IKW75N65EL5 LowVCE(sat)seriesfifthgeneration LowVCE(sat)IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode  FeaturesandBenefits: C LowVCE(sat)L5technologyoffering •Verylowcollector-emittersaturationvoltageVCEsat •Best-in-Classtradeoffbetweenconductionandswitchinglosses •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating •RoHScompliant •CompleteproductspectrumandPSpicemodels: http://www.