IPA037N08N3G
IPA037N08N3G is Power-Transistor manufactured by Infineon.
Features
- Ideal for high frequency switching and sync. rec.
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance RDS(on)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; Ro HS pliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21
Type
IPA037N08N3 G
Product Summary VDS RDS(on),max ID
IPA037N08N3 G
80 V 3.7 m W 75 A
Package Marking
PG-TO220-FP 037N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage
I D,pulse E AS V GS
T C=25 °C2) T C=100 °C T C=25 °C I D=75 A, R GS=25 W
75 54 300 680 ±20
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55/175/56
1)J-ST...
