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Infineon Technologies Electronic Components Datasheet

IPA60R165CP Datasheet

Power-Transistor

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CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPA60R165CP
650 V
0.165
39 nC
PG-TO220-3-31
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
IPA60R165CP
Package
Ordering Code
PG-TO220-3-31 SP000096437
Marking
6R165P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current2)
Pulsed drain current3)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
3),4)
AR
Symbol Conditions
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=7.9 A, V DD=50 V
E AR I D=7.9 A, V DD=50 V
Avalanche
current,
repetitive
t
3),4)
AR
I AR
MOSFET dv /dt ruggedness
Gate source voltage
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dv /dt
V GS
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
Mounting torque
P tot T C=25 °C
T j, T stg
M2.5 screws
Value
21
13
61
522
0.79
7.9
50
±20
±30
34
-55 ... 150
50
Rev. 1.3
page 1
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2005-12-22


Infineon Technologies Electronic Components Datasheet

IPA60R165CP Datasheet

Power-Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current2)
Diode pulse curren3)
Reverse diode dv /dt 5)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPA60R165CP
Value
21
61
15
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
Soldering temperature,
wavesoldering only allowed at leads
T sold
leaded
1.6 mm (0.063 in.)
from case for 10 s
min.
Values
typ.
Unit
max.
- 3.65 K/W
- - 80
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=0.79 mA 2.5 3 3.5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
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Gate resistance
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=25 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=12 A,
T j=25 °C
V GS=10 V, I D=12 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
-
- 1 µA
10 -
- 100 nA
0.15 0.165
0.40
1.9
-
-
Rev. 1.3
page 2
2005-12-22


Part Number IPA60R165CP
Description Power-Transistor
Maker Infineon Technologies
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IPA60R165CP Datasheet PDF






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