IPB60R385CP - Power Transistor

Datasheet Summary

Description

and charts stated herein.

Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ).

Warnings Due to technical requirements components may contain dangerous substances.

Features

Lowest figure-of-merit R ON x Qg.
Ultra low gate charge.
High peak current capability.
Qualified according to JEDEC1) for target.

Infineon Technologies

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Datasheet Details

Part number	IPB60R385CP
Manufacturer	Infineon Technologies
File Size	366.16 KB
Description	Power Transistor
Datasheet	IPB60R385CP Datasheet
Additional preview pages of the IPB60R385CP datasheet.

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Full PDF Text Transcription

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IPB60R385CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.

Published: Aug 1, 2011 |