IPB70N04S4-06
IPB70N04S4-06 is Power-Transistor manufactured by Infineon.
Features
- N-channel
- Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (Ro HS pliant)
- 100% Avalanche tested
IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06
Product Summary V DS R DS(on),max (SMD version) ID
40 V 6.2 mΩ 70 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB70N04S4-06 IPI70N04S4-06 IPP70N04S4-06
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N0406 4N0406 4N0406
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=35A
Avalanche current, single pulse I AS
- Gate source voltage
V GS
- Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg
- IEC climatic category; DIN IEC 68-1
- -
Value 70
280 72 70 ±20 58 -55 ... +175 55/175/56
Unit A m J A V W °C
Rev. 1.0 page 1
2010-04-13
IPB70N04S4-06 IPI70N04S4-06,...
