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Infineon Technologies Electronic Components Datasheet

IPB70P04P4-09 Datasheet

Power-Transistor

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OptiMOS®-P2 Power-Transistor
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPB70P04P4-09
IPI70P04P4-09, IPP70P04P4-09
Product Summary
V DS
R DS(on) (SMD Version)
ID
-40 V
9.1 mW
-70 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB70P04P4-09
IPI70P04P4-09
IPP70P04P4-09
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4P0409
4P0409
4P0409
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=-36A
I AS -
V GS
-
P tot T C=25 °C
T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.3
page 1
Value
-72
-50
-288
24
-72
±20
75
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
2011-02-14


Infineon Technologies Electronic Components Datasheet

IPB70P04P4-09 Datasheet

Power-Transistor

No Preview Available !

IPB70P04P4-09
IPI70P04P4-09, IPP70P04P4-09
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
-
-
- - 2 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area2)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= -1mA -40 -
-V
V GS(th) V DS=V GS, I D=-120µA -2.0 -3.0 -4.0
I DSS
V DS=-32V, V GS=0V,
T j=25°C
-
-0.05
-1 µA
V DS=-32V, V GS=0V,
T j=125°C2)
-
-20 -200
I GSS
V GS=-20V, V DS=0V
-
- -100 nA
R DS(on) V GS=-10V, I D=-70A - 6.9 9.4 mW
V GS=-10V, I D=-70A,
SMD version
-
6.6 9.1
Rev. 1.3
page 2
2011-02-14


Part Number IPB70P04P4-09
Description Power-Transistor
Maker Infineon Technologies
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IPB70P04P4-09 Datasheet PDF






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