• Part: IPB80N06S2L-07
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 158.14 KB
Download IPB80N06S2L-07 Datasheet PDF
Infineon
IPB80N06S2L-07
IPB80N06S2L-07 is Power-Transistor manufactured by Infineon.
Features - N-channel Logic Level - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (lead free) - Ultra low Rds(on) - 100% Avalanche tested IPB80N06S2L-07 IPP80N06S2L-07 Product Summary V DS R DS(on),max (SMD version) ID 55 V 6.7 mΩ 80 A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N06S2L-07 IPP80N06S2L-07 Package Ordering Code Marking PG-TO263-3-2 SP0002-18867 2N06L07 PG-TO220-3-1 SP0002-18831 2N06L07 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) I D,pulse T C=25 °C E AS I D= 80 A V GS P tot T C=25 °C T j, T stg Value 80 320 450 ±20 210 -55 ... +175 Unit A m J V W °C Rev. 1.0 page 1 http://store.iiic.cc/ 2005-12-27 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R th...