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Infineon Technologies Electronic Components Datasheet

IPD042P03L3G Datasheet

Power-Transistor

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OptiMOSTM P3 Power-Transistor
Features
• single P-Channel (Logic Level)
• Enhancement mode
• Qualified according JEDEC1) for target applications
• 175 °C operating temperature
• Pb-free; RoHS compliant
• applications: load switch, HS-switch
• Halogen-free according to IEC61249-2-21
IPD042P03L3 G
Product Summary
VDS
RDS(on),max
ID
VGS = 10V
VGS = 4.5V
-30 V
4.2 mW
6.8
-70 A
D PG-TO252-3
G
S
Type
IPD042P03L3 G
Package
Marking
PG-TO252-3 042P03L
Lead free
Yes
Packing
non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C2)
E AS I D=-70 A, R GS=25 W
V GS
P tot T C =25 °C
T j, T stg
ESD class
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Value
Unit
-70 A
-70
-280
269 mJ
±20 V
150 W
-55 ... 175
°C
class 2 ( 2 kV - < 4 kV)
260 °C
55/175/56
Rev. 2.2
page 1
2014-05-16


Infineon Technologies Electronic Components Datasheet

IPD042P03L3G Datasheet

Power-Transistor

No Preview Available !

Parameter
Thermal characteristics
Thermal resistance,
junction - case
Thermal resistance,
junction - ambient
Symbol Conditions
IPD042P03L3 G
min.
Values
typ.
Unit
max.
R thJC
R thJA 6 cm2 cooling area2)
-
-
- 1.0 K/W
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250mA
-30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=-270 µA -2.0 -1.5 -1.0
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I DSS
I GSS
V DS=-30 V, V GS=0 V,
T j=25 °C
V DS=-30 V, V GS=0 V,
T j=175 °C
V GS=-20 V, V DS=0 V
R DS(on) V GS=-4.5 V, I D=-70 A
-
-
-
-
- -1 µA
- -300
-10 -100 nA
4.6 6.8 mW
V GS=-10 V, I D=-70 A
-
3.5 4.2
Gate resistance
Transconductance
R G - 2.4
g fs
|V DS|>2|I D|R DS(on)max,
I D=-70 A
65
130
-W
-S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2014-05-16


Part Number IPD042P03L3G
Description Power-Transistor
Maker Infineon Technologies
Total Page 9 Pages
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