IPD03N03LB Datasheet | Infineon

IPD03N03LB G Opti MOS®2 Power-Transistor Features - Ideal for high-frequency dc/dc converters - Qualified according to JEDEC for target applications - N-channel, logic level - Excellent gate charge x R DS(on) product (FOM) - Superior thermal resistance - 175 °C operating temperature - Pb-free lead plating; Ro HS pliant 1) Product Summary V DS R DS(on),max ID 30 3.3 90 V mΩ A PG-TO252-3-11 Type IPD03N03LB G Package P-TO252-3-11 Ordering Code Q67042-S4260 Marking 03N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=90 A, R GS=25 Ω I D=90 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 90 90 360 240 6 ±20 115 -55 ... 175 55/175/56 m J k V/µs V W °C Unit A Rev. 1.11 page 1 2004-12-16 IPD03N03LB G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R th JC R th JA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=70 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=60 A V GS=10 V, I D=60 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=60 A 30 1.2 1.6 0.1 2 1 µA V 1.3 75 50 K/W Values typ. max. Unit 10 10 3.9 2.8 1.3 120 100 100 4.9 3.3 Ω S n A mΩ 1) 1) J-STD20 and JESD22 Current is limited by bondwire; with an R th JC=1.3 K/W the chip is able to carry 142 A. See figure 3 T...