IPD042P03L3G
IPD042P03L3G is Power-Transistor manufactured by Infineon.
Opti MOSTM P3 Power-Transistor
Features
- single P-Channel (Logic Level)
- Enhancement mode
- Qualified according JEDEC1) for target applications
- 175 °C operating temperature
- Pb-free; Ro HS pliant
- applications: load switch, HS-switch
- Halogen-free according to IEC61249-2-21
IPD042P03L3 G
Product Summary
VDS RDS(on),max
VGS = 10V VGS = 4.5V
-30 V 4.2 m W 6.8 -70 A
D PG-TO252-3 G
Type IPD042P03L3 G
Package
Marking
PG-TO252-3 042P03L
Lead free Yes
Packing non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature
I D T C=25 °C T C=100 °C
I D,pulse T C=25 °C2) E AS I D=-70 A, R GS=25 W V GS P tot T C =25 °C T j, T stg
ESD class
JESD22-A114...
