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Infineon Technologies Electronic Components Datasheet

IPD250N06N3G Datasheet

Power-Transistor

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Type
OptiMOS(TM)3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
Type
IPD250N06N3 G
Product Summary
V DS
R DS(on),max
ID
IPD250N06N3 G
60 V
25 m
28 A
Package
Marking
PG-TO252-3
250N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse3)
E AS
Gate source voltage
V GS
1)J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
T C=25 °C
I D=20 A, R GS=25
Value
28
20
112
13
±20
Unit
A
mJ
V
Rev.2.0
page 1
2008-11-26


Infineon Technologies Electronic Components Datasheet

IPD250N06N3G Datasheet

Power-Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
IPD250N06N3 G
Value
36
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm² cooling area4)
-
-
-
- 4.2 K/W
- 75
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=11 µA
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
60
2
-
-
3
0.1
-V
4
1 µA
V DS=60 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I GSS
R DS(on)
RG
V GS=20 V, V DS=0 V
V GS=10 V, I D=28 A
- 10 100 nA
-
20.7
25 m
- 0.9 -
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=28 A
12
25
-S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.2.0
page 2
2008-11-26


Part Number IPD250N06N3G
Description Power-Transistor
Maker Infineon Technologies
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IPD250N06N3G Datasheet PDF






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