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Infineon Technologies Electronic Components Datasheet

IPD25CN10NG Datasheet

Power-Transistor

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IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
OptiMOS2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max (TO252)
ID
100 V
25 mW
35 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB26CN10N G
IPD25CN10N G
IPI26CN10N G
IPP26CN10N G
Package
PG-TO263-3
PG-TO252-3
PG-TO262-3
Marking
26CN10N
25CN10N
26CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C
Pulsed drain current2)
I D,pulse
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS
I D=35 A, R GS=25 W
Reverse diode dv /dt
dv /dt
I D=35 A, V DS=80 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
PG-TO220-3
26CN10N
Value
35
25
140
65
6
±20
71
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.09
page 1
2013-07-09


Infineon Technologies Electronic Components Datasheet

IPD25CN10NG Datasheet

Power-Transistor

No Preview Available !

IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Thermal resistance, junction -
R thJA minimal footprint
-
ambient (TO220, TO262, TO263)
6 cm2 cooling area4)
-
Thermal resistance, junction -
ambient (TO252, TO251)
minimal footprint
-
6 cm2 cooling area4)
-
-
2.1 K/W
-
62
-
40
-
75
-
50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
100
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=39 µA
2
3
Zero gate voltage drain current
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
-
0.1
-V
4
1 µA
V DS=80 V, V GS=0 V,
T j=125 °C
-
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=35 A,
(TO252)
-
10
100
1
100 nA
19
25 mW
V GS=10 V, I D=35 A,
-
(TO251)
19
25
V GS=10 V, I D=35 A,
-
(TO263)
20
26
Gate resistance
Transconductance
V GS=10 V, I D=35 A,
-
(TO220, TO262)
20
26
RG
-
1.1
g fs
|V DS|>2|I D|R DS(on)max,
I D=35 A
19
38
-W
-S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.09
page 2
2013-07-09


Part Number IPD25CN10NG
Description Power-Transistor
Maker Infineon Technologies
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