IPD25CN10NG
IPD25CN10NG is Power-Transistor manufactured by Infineon.
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G
OptiMOS™2 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO252) ID
100 V 25 mW 35 A
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
Type
IPB26CN10N G
IPD25CN10N G
IPI26CN10N G
IPP26CN10N G
Package
PG-TO263-3
PG-TO252-3
PG-TO262-3
Marking
26CN10N
25CN10N
26CN10N
Maximum ratings, at T j=25 °C, unless otherwise...
