IPD25CN10N - N-Channel MOSFET

Datasheet Summary

Features

Static drain-source on-resistance: RDS(on)≤25mΩ.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IPD25CN10N
Manufacturer	INCHANGE
File Size	238.16 KB
Description	N-Channel MOSFET
Datasheet	IPD25CN10N Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IPD25CN10N,IIPD25CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤25mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 35 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 71 Tj Max.

Published: Oct 8, 2020 |