IPD25CN10N Overview
isc N-Channel MOSFET Transistor IPD25CN10N,IIPD25CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤25mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·
IPD25CN10N Key Features
- Static drain-source on-resistance
- DESCRITION -Ideal for high-frequency switching and synchronous rectification
