Datasheet4U Logo Datasheet4U.com

IPD25CN10NG - Power-Transistor

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 25 mW 35 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPD25CN10N Power-Transistor Infineon
IPD25CN10N N-Channel MOSFET INCHANGE
IPD200N15N3 Power-Transistor Infineon
IPD200N15N3 N-Channel MOSFET INCHANGE
IPD20N03L OptiMOS Buck converter series Infineon Technologies AG

Other Datasheets by Infineon

Part Number Description
IPD25CNE8NG Power-Transistor
IPD250N06N3G Power-Transistor
IPD25N06S2-40 Power-Transistor
IPD25N06S4L-30 Power-Transistor
IPD200N15N3G Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 25 mW 35 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 Marking 26CN10N 25CN10N 26CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C Pulsed drain current2) I D,