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IPD25CN10NG Datasheet Power-transistor

Manufacturer: Infineon

Overview: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 25 mW 35 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

IPD25CN10N from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Infineon Logo IPD25CN10N Power-Transistor Infineon
INCHANGE Logo IPD25CN10N N-Channel MOSFET INCHANGE

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