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Infineon Technologies Electronic Components Datasheet

IPD25N06S2-40 Datasheet

Power-Transistor

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OptiMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPD25N06S2-40
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
40 m
29 A
PG-TO252-3-11
Type
IPD25N06S2-40
Package
Marking
PG-TO252-3-11 2N0640
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current1)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=25A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
29
21
116
80
±20
68
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-07-18


Infineon Technologies Electronic Components Datasheet

IPD25N06S2-40 Datasheet

Power-Transistor

No Preview Available !

IPD25N06S2-40
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area2)
min.
Values
typ.
Unit
max.
- - 2.2 K/W
- - 100
- - 75
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=26 µA 2.1 3.0 4.0
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
V DS=55 V, V GS=0 V,
T j=125 °C1)
-
1 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1 100 nA
Drain-source on-state resistance
RDS(on) V GS=10 V, I D=13 A,
- 28.6 40 m
Rev. 1.0
page 2
2006-07-18


Part Number IPD25N06S2-40
Description Power-Transistor
Maker Infineon Technologies
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IPD25N06S2-40 Datasheet PDF






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