IPD60R650CE
IPD60R650CE is MOSFET manufactured by Infineon.
Features
- Extremelylowlossesduetoverylow FOMRdson- Qgand Eoss
- Veryhighmutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldpound
- Qualifiedforstandardgradeapplications
Gate Pin 1
Source Pin 3
Applications
PFCstages,hardswitching PWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:For MOSFETparallelingtheuseofferritebeadson thegateorseparatetotempolesisgenerallyremended. Note2:- 6R650CEis Full PAKmarkingonly
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
650 mΩ
Id. 9.9 A
Qg.typ
20.5 n C
ID,pulse
Eoss@400V
µJ
Type/Ordering Code IPD60R650CE IPA60R650CE
Package PG-TO 252 PG-TO 220 Full PAK
Marking
Related Links
60S650CE / 6R650CE- see Appendix A
Final Data Sheet
1 Rev.2.3,2018-04-10
600VCool MOSªCEPower Transistor
IPD60R650CE,IPA60R650CE
Tableof Contents
Description
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