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Infineon Technologies Electronic Components Datasheet

IPD70N04S3-07 Datasheet

Power-Transistor

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OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD70N04S3-07
Product Summary
V DS
R DS(on),max
ID
40 V
6.0 m
82 A
PG-TO252-3-11
Type
IPD70N04S3-07
Package
Marking
PG-TO252-3-11 QN0407
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V1)
Pulsed drain current1)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=50 A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
82
58
280
145
±20
79
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2007-05-03


Infineon Technologies Electronic Components Datasheet

IPD70N04S3-07 Datasheet

Power-Transistor

No Preview Available !

IPD70N04S3-07
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area2)
min.
Values
typ.
Unit
max.
- - 1.9 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=50 µA 2.1 3.0 4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
-
1 µA
Gate-source leakage current
Drain-source on-state resistance
I GSS
RDS(on)
V DS=40 V, V GS=0 V,
T j=125 °C2)
V GS=20 V, V DS=0 V
V GS=10 V, I D=70 A
-
-
-
- 100
- 100 nA
4.9 6.0 m
Rev. 1.0
page 2
2007-05-03


Part Number IPD70N04S3-07
Description Power-Transistor
Maker Infineon Technologies
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IPD70N04S3-07 Datasheet PDF






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