IPG16N10S4-61 Datasheet Power-Transistor

Manufacturer: Infineon

Datasheet Details

OptiMOS™-T2 Power-Transistor.

Dual N-channel Normal Level - Enhancement mode.
AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
RoHS compliant.
100% Avalanche tested IPG16N10S4-61 Product Summary VDS RDS(on),max3) ID 100 V 61 mW 16 A PG-TDSON-8 87 65 12 34 87 65 Type IPG16N10S4-61 Package PG-TDSON-8 Marking 4N1061 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one.

Brand Logo	Part Number	Description	Manufacturer
	IPG16N10S4-61A	Power-Transistor	Infineon

Part Number	Description
IPG20N10S4L-22	Power-Transistor
IPG20N10S4L-35A	Power-Transistor