Datasheet4U Logo Datasheet4U.com

IPI051NE8NG - Power-Transistor

Download the IPI051NE8NG datasheet PDF. This datasheet also covers the IPB-051NE variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB-051NE-8.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPI051N15N5 MOSFET Infineon
IPI051N15N5 N-Channel MOSFET INCHANGE
IPI052NE7N3 Power-Transistor Infineon
IPI057N08N3 Power-Transistor Infineon
IPI057N08N3G Power-Transistor Infineon

Other Datasheets by Infineon

Part Number Description
IPI052NE7N3G Power-Transistor
IPI020N06N Power Transistor
IPI024N06N3G Power-Transistor
IPI029N06N Power Transistor
IPI030N10N3G Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO 263) ID 85 5.