IPI051NE8NG Description
IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS®2 Power-Transistor.
IPI051NE8NG Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification Type IPB051NE8N G IPI05CNE8N G IPP054NE8N G
- case Thermal resistance, junction
- ambient R thJC R thJA minimal footprint 6 cm2 cooling area5) 0.5 62 40 K/W
- 10 1 4.1