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Infineon Technologies Electronic Components Datasheet

IPI45N06S3L-13 Datasheet

OptiMOS-T2 Power-Transistor

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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB45N06S3L-13
IPI45N06S3L-13, IPP45N06S3L-13
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
13.1 m
45 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB45N06S3L-13
IPI45N06S3L-13
IPP45N06S3L-13
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N06L13
3N06L13
3N06L13
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
I D,pulse
E AS
T C=25 °C
I D=22.5 A
Avalanche current, single pulse
I AS
Gate source voltage3)
V GS
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
P tot
T j, T stg
T C=25 °C
Value
45
37
180
145
45
±16
65
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2007-11-07
Datasheet pdf - http://www.DataSheet4U.net/


Infineon Technologies Electronic Components Datasheet

IPI45N06S3L-13 Datasheet

OptiMOS-T2 Power-Transistor

No Preview Available !

www.DataSheet.co.kr
IPB45N06S3L-13
IPI45N06S3L-13, IPP45N06S3L-13
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 2.3 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area4)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=30 µA 1.2 1.7 2.2
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
V DS=55 V, V GS=0 V,
T j=125 °C2)
-
1 100
Gate-source leakage current
I GSS
V GS=16 V, V DS=0 V
-
1 100 nA
Drain-source on-state resistance
R DS(on) V GS=5 V, I D=17 A
- 20.4 25.1 m
V GS=5 V, I D=17 A,
SMD version
- 20.1 24.8
V GS=10 V, I D=26 A
- 11.4 13.4
V GS=10 V, I D=26 A,
SMD version
- 11.1 13.1
Rev. 1.1
page 2
2007-11-07
Datasheet pdf - http://www.DataSheet4U.net/


Part Number IPI45N06S3L-13
Description OptiMOS-T2 Power-Transistor
Maker Infineon Technologies
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IPI45N06S3L-13 Datasheet PDF





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