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Infineon Technologies Electronic Components Datasheet

IPI45N06S4-09 Datasheet

OptiMOS-T2 Power-Transistor

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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB45N06S4-09
IPI45N06S4-09, IPP45N06S4-09
Product Summary
V DS
R DS(on),max (SMD version)
ID
60 V
9.2 m
45 A
Type
IPB45N06S4-09
IPI45N06S4-09
IPP45N06S4-09
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0609
4N0609
4N0609
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=22.5A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
45
45
180
97
45
±20
71
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2009-03-24
Datasheet pdf - http://www.DataSheet4U.net/


Infineon Technologies Electronic Components Datasheet

IPI45N06S4-09 Datasheet

OptiMOS-T2 Power-Transistor

No Preview Available !

www.DataSheet.co.kr
IPB45N06S4-09
IPI45N06S4-09, IPP45N06S4-09
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 2.1 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=34µA
I DSS
V DS=60V, V GS=0V,
T j=25°C
V DS=60V, V GS=0V,
T j=125°C2)
I GSS
V GS=20V, V DS=0V
R DS(on) V GS=10 V, I D=45 A
V GS=10V, I D=45A,
SMD version
60 -
-V
2.0 3.0 4.0
- 0.01 1 µA
- 5 100
- - 100 nA
- 7.9 9.4 m
- 7.6 9.1
Rev. 1.0
page 2
2009-03-24
Datasheet pdf - http://www.DataSheet4U.net/


Part Number IPI45N06S4-09
Description OptiMOS-T2 Power-Transistor
Maker Infineon Technologies
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IPI45N06S4-09 Datasheet PDF






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