900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Infineon Technologies Electronic Components Datasheet

IPI70N04S3-07 Datasheet

Power-Transistor

No Preview Available !

OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPB70N04S3-07
IPI70N04S3-07, IPP70N04S3-07
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
6.2 m
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB70N04S3-07
IPI70N04S3-07
IPP70N04S3-07
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N0407
3N0407
3N0407
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=50 A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
58
280
145
±20
79
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2007-05-03


Infineon Technologies Electronic Components Datasheet

IPI70N04S3-07 Datasheet

Power-Transistor

No Preview Available !

IPB70N04S3-07
IPI70N04S3-07, IPP70N04S3-07
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 1.9 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=50 µA 2.1 3.0 4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
-
1 µA
Gate-source leakage current
Drain-source on-state resistance
I GSS
RDS(on)
V DS=40 V, V GS=0 V,
T j=125 °C2)
V GS=20 V, V DS=0 V
V GS=10 V, I D=70 A
-
-
-
- 100
- 100 nA
5.2 6.5 m
V GS=10 V, I D=70 A,
SMD version
-
4.9 6.2
Rev. 1.0
page 2
2007-05-03


Part Number IPI70N04S3-07
Description Power-Transistor
Maker Infineon Technologies
PDF Download

IPI70N04S3-07 Datasheet PDF





Similar Datasheet

1 IPI70N04S3-07 Power-Transistor
Infineon Technologies





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy