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Infineon Technologies Electronic Components Datasheet

IPP100N06S2L-05 Datasheet

Power-Transistor

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OptiMOS® Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB100N06S2L-05
IPP100N06S2L-05
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
4.4 m
100 A
PG-TO263-3-2
PG-TO220-3-1
Type
IPB100N06S2L-05
IPP100N06S2L-05
Package
Ordering Code Marking
PG-TO263-3-2 SP0002-19003 PN06L05
PG-TO220-3-1 SP0002-18879 PN06L05
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
Pulsed drain current2)
Avalanche energy, single pulse2)
Gate source voltage4)
Power dissipation
Operating and storage temperature
T C=100 °C,
V GS=10 V2)
I D,pulse T C=25 °C
E AS I D= 80 A
V GS
P tot T C=25 °C
T j, T stg
Value
100
100
400
810
±20
300
-55 ... +175
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-03-13


Infineon Technologies Electronic Components Datasheet

IPP100N06S2L-05 Datasheet

Power-Transistor

No Preview Available !

Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area5)
IPB100N06S2L-05
IPP100N06S2L-05
min.
Values
typ.
Unit
max.
- - 0.5 K/W
- - 62
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V (BR)DSS V GS=0 V, I D= 1 mA
V GS(th) V DS=V GS, I D=250 µA
55
1.2
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
V DS=55 V, V GS=0 V,
T j=125 °C2)
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=4.5 V, I D=80 A
V GS=4.5 V, I D=80 A,
SMD version
-
-
-
-
-
-
1.6
0.01
1
1
4.3
4.0
-V
2.0
1 µA
100
100 nA
5.9 m
5.6
Drain-source on-state resistance
RDS(on) V GS=10 V, I D=80 A
- 3.5 4.7 m
V GS=10 V, I D=80 A,
SMD version
-
3.2 4.4
Rev. 1.0
page 2
2006-03-13


Part Number IPP100N06S2L-05
Description Power-Transistor
Maker Infineon Technologies
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IPP100N06S2L-05 Datasheet PDF





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