IPP110N20N3G Infineon Datasheet

IPP110N20N3G Key Features

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS pliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) 0.5 62 40 K/W
• 10 1 9.9
• 5340 401 5 18 26 41 11