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IPP410N30N - MOSFET

Datasheet Summary

Features

N-channel, normal level.
Fast Diode with reduced Qrr.
Optimized for hard commutation ruggedness.
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon Technologies

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IPP410N30N MOSFET by Infineon Technologies - Datasheet Preview — Datasheet preview – IPP410N30N

Datasheet Details

Part number	IPP410N30N
Manufacturer	Infineon Technologies
File Size	1.75 MB
Description	MOSFET
Datasheet	IPP410N30N Datasheet
Additional preview pages of the IPP410N30N datasheet.

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Full PDF Text Transcription

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,300V IPP410N30N DataSheet Rev.2.

Published: Jun 17, 2015 |