IPP410N30N
IPP410N30N is MOSFET manufactured by Infineon.
Description
Features
- N-channel,normallevel
- Fast Diodewithreduced Qrr
- Optimizedforhardmutationruggedness
- Verylowon-resistance RDS(on)
- 175°Coperatingtemperature
- Pb-freeleadplating;Ro HSpliant
- Qualifiedaccordingto JEDEC1)fortargetapplication
- Halogen-freeaccordingto IEC61249-2-21
Table1Key Performance Parameters
Parameter
Value
Unit
VDS 300 V
RDS(on),max
41 mΩ
ID 44 A
Opti MOSTMPower-Transistor,300V IPP410N30N
TO-220-3 tab
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPP410N30N
Package PG-TO220-3
Marking 410N30N
Related Links
- 1) J-STD20 and JESD22 Final Data Sheet
Rev.2.0,2014-12-27
Opti MOSTMPower-Transistor,300V
Tableof Contents
Description
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