IPP45N06S3-16 Datasheet | Infineon

.Data Sheet.co.kr IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 Opti MOS®-T Power-Transistor Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (lead free) - Ultra low Rds(on) - Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 55 15.4 45 V mΩ A PG-TO262-3-1 PG-TO220-3-1 Type IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Ordering Code SP0001-02224 SP0001-02217 SP0001-02218 Marking 3N0616 3N0616 3N0616 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions ID T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse3) Drain gate voltage2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V DG V GS P tot T j, T stg T C=25 °C T C=25 °C I D= 27.5 A Value 45 33 180 95 55 ±20 65 -55 ... +175 55/175/56 V W °C m J Unit A Rev. 1.0 page 1 2005-11-25 Datasheet pdf - http://..net/ .Data Sheet.co.kr IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R th JC R th JA R th JA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I DSS V DS=V GS, I D=30 µA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C1) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=23 A V GS=10 V, I D=23 A, SMD version 55 2.1 3 0.1 4 1 µA V 2.3 62 62 40 K/W Values typ. max. Unit - 1 1 13.5 13.2 100 100 15.7 15.4...