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Infineon Technologies Electronic Components Datasheet

IPP45N06S3-16 Datasheet

OptiMOS-T Power-Transistor

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OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
PG-TO263-3-2
• Avalanche tested
IPB45N06S3-16
IPI45N06S3-16, IPP45N06S3-16
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
15.4 m
45 A
PG-TO262-3-1
PG-TO220-3-1
Type
IPB45N06S3-16
IPI45N06S3-16
IPP45N06S3-16
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Ordering Code
SP0001-02224
SP0001-02217
SP0001-02218
Marking
3N0616
3N0616
3N0616
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
Avalanche energy, single pulse3)
I D,pulse
E AS
T C=25 °C
I D= 27.5 A
Drain gate voltage2)
V DG
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
45
33
180
95
55
±20
65
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2005-11-25
Datasheet pdf - http://www.DataSheet4U.net/


Infineon Technologies Electronic Components Datasheet

IPP45N06S3-16 Datasheet

OptiMOS-T Power-Transistor

No Preview Available !

www.DataSheet.co.kr
IPB45N06S3-16
IPI45N06S3-16, IPP45N06S3-16
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 2.3 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area5)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=V GS, I D=30 µA
55
2.1
-
3
-V
4
Zero gate voltage drain current
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
V DS=25 V, V GS=0 V,
T j=125 °C1)
-
1 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1 100 nA
Drain-source on-state resistance
R DS(on) V GS=10 V, I D=23 A
- 13.5 15.7 m
V GS=10 V, I D=23 A,
SMD version
- 13.2 15.4
Rev. 1.0
page 2
2005-11-25
Datasheet pdf - http://www.DataSheet4U.net/


Part Number IPP45N06S3-16
Description OptiMOS-T Power-Transistor
Maker Infineon Technologies
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IPP45N06S3-16 Datasheet PDF






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