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Infineon Technologies Electronic Components Datasheet

IPP45P03P4L-11 Datasheet

OptiMOS-P2 Power-Transistor

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OptiMOS®-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Intended for reverse battery protection
IPB45P03P4L-11
IPI45P03P4L-11, IPP45P03P4L-11
Product Summary
V DS
R DS(on) (SMD Version)
ID
-30 V
10.8 m
-45 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB45P03P4L-11
IPI45P03P4L-11
IPP45P03P4L-11
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4P03L11
4P03L11
4P03L11
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C,
V GS=-10V1)
T C=100°C,
V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-22.5A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
Value
-45
-42
-180
110
-45
+5/-16
58
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2008-07-29
Datasheet pdf - http://www.DataSheet4U.net/


Infineon Technologies Electronic Components Datasheet

IPP45P03P4L-11 Datasheet

OptiMOS-P2 Power-Transistor

No Preview Available !

www.DataSheet.co.kr
IPB45P03P4L-11
IPI45P03P4L-11, IPP45P03P4L-11
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 2.6 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= -1mA
V GS(th) V DS=V GS, I D=-85µA
I DSS
V DS=-24V, V GS=0V,
T j=25°C
-30 -
-V
-1.0 -1.5 -2.0
-
-0.02
-1 µA
V DS=-24V, V GS=0V,
T j=125°C2)
-
-7 -70
I GSS
V GS=-16V, V DS=0V
-
- -100 nA
R DS(on) V GS=-4.5V, I D=-25A - 13.1 18.7 m
V GS=-4.5V, I D=-25A,
SMD version
-
12.8 18.4
V GS=-10V, I D=-45A - 9.0 11.1
V GS=-10V, I D=-45A,
SMD version
-
8.7 10.8
Rev. 1.0
page 2
2008-07-29
Datasheet pdf - http://www.DataSheet4U.net/


Part Number IPP45P03P4L-11
Description OptiMOS-P2 Power-Transistor
Maker Infineon Technologies
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IPP45P03P4L-11 Datasheet PDF






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