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Infineon Technologies Electronic Components Datasheet

IPP70N10SL-16 Datasheet

Power-Transistor

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SIPMOSPower-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
175°C operating temperature
Avalanche rated
dv/dt rated
• Green Package
(lead free)
P-TO262-3-1
IPI70N10SL-16
IPP70N10SL-16, IPB70N10SL-16
P-TO263-3-2
Product Summary
VDS 100 V
RDS(on)
16 m
ID 70 A
P-TO220-3-1
2
P-TO220-3-1
23
1
Type
IPP70N10SL-16
IPB70N10SL-16
IPI70N10SL-16
Package
PG-TO220-3-1
PG-TO263-3-2
PG-TO262-3-1
Ordering Code
SP0002-25708
SP0002-25700
SP000225705
Marking
N10L16
N10L16
N10L-16
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC=25°C
TC=100°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=70 A , VDD=25V, RGS=25
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
ID puls
EAS
EAR
dv/dt
IS=70A, VDS=0V, di/dt=200A/µs
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Page 1
Value
70
50
280
Unit
A
700 mJ
25
6 kV/µs
±20 V
250 W
-55... +175
55/175/56
°C
2006-02-14


Infineon Technologies Electronic Components Datasheet

IPP70N10SL-16 Datasheet

Power-Transistor

No Preview Available !

Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
IPI70N10SL-16
IPP70N10SL-16, IPB70N10SL-16
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- - 0.6 K/W
- - 62.5
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS 100
VGS=0V, ID=2mA
Gate threshold voltage, VGS = VDS
VGS(th)
1.2
ID = 2 mA
Zero gate voltage drain current
VDS=100V, VGS=0V, Tj=25°C
VDS=100V, VGS=0V, Tj=150°C
Gate-source leakage current
IDSS
IGSS
-
-
-
VGS=20V, VDS=0V
Drain-source on-state resistance
RDS(on)
-
VGS=4.5V, ID=50A
Drain-source on-state resistance
RDS(on)
-
VGS=10V, ID =50A
Values
typ.
-
1.6
0.1
-
10
14
10
max.
-
2
1
100
100
25
16
Unit
V
µA
nA
m
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2006-02-14


Part Number IPP70N10SL-16
Description Power-Transistor
Maker Infineon Technologies
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