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Infineon Technologies Electronic Components Datasheet

IPP77N06S2-12 Datasheet

Power-Transistor

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OptiMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB77N06S2-12
IPP77N06S2-12
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
11.7 m
77 A
PG-TO263-3-2
PG-TO220-3-1
Type
IPB77N06S2-12
IPP77N06S2-12
Package
PG-TO263-3-2
PG-TO220-3-1
Ordering Code Marking
SP0002-18173 2N0612
SP0002-18172 2N0612
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D= 77 A
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
77
56
308
280
±20
158
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2005-12-27


Infineon Technologies Electronic Components Datasheet

IPP77N06S2-12 Datasheet

Power-Transistor

No Preview Available !

Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area5)
IPB77N06S2-12
IPP77N06S2-12
min.
Values
typ.
Unit
max.
- - 0.95 K/W
- - 62
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=93 µA 2.1 3.0 4.0
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
Gate-source leakage current
Drain-source on-state resistance
I GSS
RDS(on)
V DS=55 V, V GS=0 V,
T j=125 °C2)
V GS=20 V, V DS=0 V
V GS=10 V, I D=38 A,
-
-
-
1 100
1 100 nA
9.8 12.0 m
V GS=10 V, I D=38 A,
SMD version
-
9.5 11.7
Rev. 1.0
page 2
2005-12-27


Part Number IPP77N06S2-12
Description Power-Transistor
Maker Infineon Technologies
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