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Infineon Technologies Electronic Components Datasheet

IPP77N06S3-09 Datasheet

Power-Transistor

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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
8.8 m
77 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB77N06S3-09
IPI77N06S3-09
IPP77N06S3-09
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N0609
3N0609
3N0609
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current1)
Avalanche energy, single pulse1)
I D,pulse
E AS
T C=25 °C
I D=38.5 A
Avalanche current, single pulse
I AS
Gate source voltage2)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
77
55
160
245
77
±20
107
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2007-11-07


Infineon Technologies Electronic Components Datasheet

IPP77N06S3-09 Datasheet

Power-Transistor

No Preview Available !

IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics1)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 1.4 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=55 µA 2.1 3.0
-V
4
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=55 V, V GS=0 V,
T j=125 °C2)
I GSS
V GS=16 V, V DS=0 V
R DS(on) V GS=10 V, I D=39 A
-
-
-
1 100
1 100 nA
7.7 9.1 m
V GS=10 V, I D=39 A,
SMD version
-
7.4 8.8
Rev. 1.1
page 2
2007-11-07


Part Number IPP77N06S3-09
Description Power-Transistor
Maker Infineon Technologies
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