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IPP77N06S3-09 - Power-Transistor

Datasheet Summary

Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green product (RoHS compliant).
  • 100% Avalanche tested IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 Product Summary V DS R DS(on),max (SMD version) ID 55 V 8.8 mΩ 77 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N0609 3N060.

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Datasheet Details

Part number IPP77N06S3-09
Manufacturer Infineon Technologies
File Size 182.17 KB
Description Power-Transistor
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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 Product Summary V DS R DS(on),max (SMD version) ID 55 V 8.8 mΩ 77 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N0609 3N0609 3N0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current1) Avalanche energy, single pulse1) I D,pulse E AS T C=25 °C I D=38.
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