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Infineon Technologies Electronic Components Datasheet

IPP80N08S2L-07 Datasheet

Power-Transistor

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OptiMOSPower-Transistor
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB80N08S2L-07
IPP80N08S2L-07
Product Summary
V DS
R DS(on),max (SMD version)
ID
75 V
6.8 mW
80 A
PG-TO263-3-2
PG-TO220-3-1
Type
IPB80N08S2L-07
IPP80N08S2L-07
Package
Ordering Code Marking
PG-TO263-3-2 SP0002-19051 2N08L07
PG-TO220-3-1 SP0002-19050 2N08L07
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=80A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
810
±20
300
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.1
page 1
2014-03-07


Infineon Technologies Electronic Components Datasheet

IPP80N08S2L-07 Datasheet

Power-Transistor

No Preview Available !

Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
IPB80N08S2L-07
IPP80N08S2L-07
min.
Values
typ.
Unit
max.
- - 0.5 K/W
- - 62
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
75
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1.2
1.6
2.0
Zero gate voltage drain current
I DSS
V DS=75 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=75 V, V GS=0 V,
T j=125 °C2)
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=4.5 V, I D=80 A
-
-
-
1 100
1 100 nA
6.6 9 mW
V GS=4.5 V, I D=80 A,
SMD version
-
6.3 8.7
Drain-source on-state resistance
RDS(on) V GS=10 V, I D=80 A
- 5.1 7.1 mΩ
V GS=10 V, I D=80 A,
SMD version
-
4.8 6.8
Rev. 1.1
page 2
2014-03-07


Part Number IPP80N08S2L-07
Description Power-Transistor
Maker Infineon Technologies
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IPP80N08S2L-07 Datasheet PDF





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