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IPW65R190E6 - Power Transistor

Download the IPW65R190E6 datasheet PDF. This datasheet also covers the IPA-65R190 variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.

CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation.

Features

  • Extremely low losses due to very low FOM Rdson.
  • Qg and Eoss.
  • Very high commutation ruggedness.
  • Easy to use/drive.
  • JEDEC1) qualified, Pb-free plating, Halogen free.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPA-65R190-E6.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.1, 2018-02-28 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
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