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Infineon Technologies Electronic Components Datasheet

PTFA142401FL Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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Thermally-Enhanced High Power RF LDMOS FET
240 W, 1450 – 1500 MHz
www.DataSheet4U.net
Description
The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs
designed for DVB and DAB applications in the 1450 to 1500 MHz
frequency band. Features include internal I/O matching and thermally-
enhanced packages with slotted or earless flanges. Manufactured
with Infineon's advanced LDMOS process, these devices provide
excellent thermal performance and superior reliability.
PTFA142401EL
Package H-33288-2
PTFA142401FL
Package H-34288-2
PTFA142401EL
PTFA142401FL
DVB-T Drive-up
VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz,
DVB-T signal, PAR = 9.65 dB at 0.01%, 8 MHz BW
ACPR = 1475+/-4.3 MHz delta marker, 30 kHz RBW
-25 40
Efficiency
-30 30
-35
ACPR Hi
-40
ACPR Low
20
10
-45
42
43 44 45 46 47 48
Average Output Power (dBm)
0
49
Features
• Pb-free, RoHS-compliant and thermally-enhanced
packages with less than 0.25 micron Au plating
• Broadband internal matching
• Typical DVB-T performance at 1475 MHz, 30 V
- Average output power = 47.0 dBm
- Linear Gain = 16.0 dB
- Efficiency = 27.5%
- Adjacent channel power = –32 dBc
• Typical CW performance, 1475 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 52%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
200 W (CW) output power
RF Characteristics
DVB-T Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 2.0 A, POUT = 50 W average
ƒ = 1475 MHz DVB-T, channel bandwidth = 8.0 MHz , peak/average = 9.65 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio (±4.3 MHz offset, 30 kHz RBW)
Symbol Min Typ
Gps — 16.5
ηD — 27.5
ACPR
— –32
Max
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 04, 2009-07-16


Infineon Technologies Electronic Components Datasheet

PTFA142401FL Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 2.0 A, POUT = 240 W PEP, ƒ = 1500 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
ηD
IMD
Min
15.0
40
PTFA142401EL
PTFA142401FL
Typ Max Unit
16.0
dB
43 —
%
–31 –29 dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 30 V, IDQ = 2.0 A
VGS = 10 V, VDS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 240 W CW)
Ordering Information
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
2.0
Typ
0.05
2.5
Max
1.0
10.0
3.0
1.0
Unit
V
µA
µA
V
µA
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Value
65
–0.5 to +12
200
625
3.57
–40 to +150
0.28
Unit
V
V
°C
W
W/°C
°C
°C/W
Type and Version
PTFA142401EL V4
PTFA142401FL V4
Package Outline
H-33288-2
H-34288-2
Package Description
Thermally-enhanced, slotted flange,
single-ended
Thermally-enhanced, earless flange,
single-ended
*See Infineon distributor for future availability.
Data Sheet
2 of 10
Shipping
Tray
Tray
Marking
PTFA142401EL
PTFA142401FL
Rev. 04, 2009-07-16


Part Number PTFA142401FL
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon Technologies
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