PTFB191501E datasheet by Infineon.
| Part number | PTFB191501E |
|---|---|
| Datasheet | PTFB191501E-InfineonTechnologies.pdf |
| File Size | 322.39 KB |
| Manufacturer | Infineon |
| Description | Thermally-Enhanced High Power RF LDMOS FETs |
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The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.
| Part Number | Description |
|---|---|
| PTFB191501F | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB192503EL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB192503FL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB182503EL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB182503FL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB183408SV | High Power RF LDMOS Field Effect Transistor |
| PTFB241402F | High Power RF LDMOS Field Effect Transistor |
| PTFA142401EL | Thermally-Enhanced High Power RF LDMOS FET |
| PTFA142401FL | Thermally-Enhanced High Power RF LDMOS FET |
| PTFA180701E | Thermally-Enhanced High Power RF LDMOS FET |
