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Infineon Technologies Electronic Components Datasheet

PTFB191501E Datasheet

Thermally-Enhanced High Power RF LDMOS FETs

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PTFB191501E pdf
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 1930 – 1990 MHz
Description
The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs
designed for single- and two-carrier WCDMA and CDMA applications
from 1930 to 1990 MHz. Features include input and output matching,
and thermally-enhanced, RoHs-compliant package with slotted and
earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFB191501E
Package H-36248-2
PTFB191501F
Package H-37248-2
PTFB191501E
PTFB191501F
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
-20 40
-25
Efficiency
35
-30
IMD Up
30
-35 25
-40 20
-45 15
IMD Low
-50 10
-55
ACPR
5
-60 0
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
RF Characteristics
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
1990 MHz, 30 V
- Average output power = 35 W
- Linear gain = 18 dB
- Efficiency = 30%
- Intermodulation distortion = –35 dBc
• Typical CW performance, 1990 MHz, 30 V
- Output power at P–1dB = 150 W
- Efficiency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty peaking
amplifiers
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V, 150 W
(CW) output power
• Pb-free, RoHS-compliant
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 35 W average, ƒ1 = 1985 MHz, ƒ2 = 1995 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
Gps — 18
ηD — 30
IMD — –35
Max
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 15
Rev. 03, 2015-01-14


Infineon Technologies Electronic Components Datasheet

PTFB191501E Datasheet

Thermally-Enhanced High Power RF LDMOS FETs

No Preview Available !

PTFB191501E pdf
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 150 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
ηD
IMD
Min
17
42
PTFB191501E
PTFB191501F
Typ Max Unit
18 — dB
44 —
%
–30 –28 dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 1.2 A
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
2.4
Typ
0.08
2.9
Max
1.0
10.0
3.4
1.0
Unit
V
µA
µA
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 200 W CW)
Symbol
VDSS
VGS
TJ
TSTG
RθJC
Value
65
–6 to +10
200
–40 to +150
0.29
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB191501E V1
PTFB191501E V1 R250
PTFB191501F V1
PTFB191501F V1 R250
Package Type
H-36248-2
H-36248-2
H-37248-2
H-37248-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Thermally-enhanced earless flange, single-ended
Shipping
Tray
Tape & Reel 250 pcs
Tray
Tape & Reel 250 pcs
Data Sheet
2 of 15
*See Infineon distributor for future availability.
Rev. 03, 2015-01-14


Part Number PTFB191501E
Description Thermally-Enhanced High Power RF LDMOS FETs
Maker Infineon Technologies
Total Page 15 Pages
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