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Infineon Technologies Electronic Components Datasheet

PTFB192503EL Datasheet

Thermally-Enhanced High Power RF LDMOS FETs

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PTFB192503EL pdf
PTFB192503EL
PTFB192503FL
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1930 – 1990 MHz
Description
The PTFB192503EL and PTFB192503FL are 240-watt LDMOS
FETs intended for use in multi-standard cellular power amplifier
applications in the 1930 to 1990 MHz frequency band. Features
include input and output matching, high gain, wide signal
bandwidth and reduced memory effects for improved DPD
correctability. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance
and superior reliability.
PTFB192503EL
Package H-33288-6
PTFB192503FL
Package H-34288-4/2
Two-carrier WCDMA 3GPP
VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz
3GPP WCDMA, PAR = 8:1,
10 MHz carrier spacing BW 3.84MHz
20 50
19 Gain
40
18 30
17
Efficiency
16
20
10
15 0
33 35 37 39 41 43 45 47 49
Output Power (dBm)
Features
• Broadband internal input and output matching
• Enhanced for use in DPD error correction systems
• Typical two-carrier WCDMA performance, 30 V,
1990 MHz
- Average output power = 50 W
- Linear gain = 19 dB
- Drain efficiency = 28 %
- Intermodulation distortion = –35 dBc
• Typical CW performance, 1990 MHz, 30 V
- Output power at P1dB = 240 W
- Efficiency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty peaking
amplifiers
• Integrated ESD protection. Human Body Model,
Class 2 (minimum)
• Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
• Pb-free, RoHS-compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
VDD = 30 V, IDQ = 1.9 A, POUT = 50 W average, ƒ1 = 1980 MHz, ƒ2 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8:1 dB @ 0.01% CCDF
Characteristic
Symbol
Gain
Drain Efficiency
Gps
hD
Intermodulation Distortion
IMD
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 15
Min
Typ
19
28
–35
Max
Unit
dB
%
dBc
Rev. 09.1, 2016-06-13


Infineon Technologies Electronic Components Datasheet

PTFB192503EL Datasheet

Thermally-Enhanced High Power RF LDMOS FETs

No Preview Available !

PTFB192503EL pdf
PTFB192503EL
PTFB192503FL
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.9 A, POUT = 220 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Gain
Drain Efficiency
Gps
hD
17
40
Intermodulation Distortion
IMD
Typ
18
41.5
–29
Max
–27
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 30 V, IDQ = 1.9 A
VGS = 10 V, VDS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 200 W CW)
Ordering Information
Type and Version
PTFB192503EL V1 R0
PTFB192503EL V1 R250
PTFB192503FL V2 R0
PTFB192503FL V2 R250
Order Code
PTFB192503ELV1R0XTMA1
PTFB192503ELV1R250XTMA1
PTFB192503FLV2R0XTMA1
PTFB192503FLV2R250XTMA1
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
2.3
Typ
0.03
2.8
Max
1.0
10.0
3.3
1.0
Unit
V
µA
µA
W
V
µA
Symbol
VDSS
VGS
TJ
TSTG
RqJC
Value
65
–6 to +10
200
–40 to +150
0.262
Unit
V
V
°C
°C
°C/W
Package Description
H-33288-6, bolt-down
H-33288-6, bolt-down
H-34288-4/2, earless
H-34288-4/2, earless
Shipping
Tape & Reel, 50pcs
Tape & Reel, 250pcs
Tape & Reel, 50pcs
Tape & Reel, 250pcs
Data Sheet
2 of 15
Rev. 09.1, 2016-06-13


Part Number PTFB192503EL
Description Thermally-Enhanced High Power RF LDMOS FETs
Maker Infineon Technologies
Total Page 15 Pages
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