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Infineon Technologies Electronic Components Datasheet

SDT10S30 Datasheet

Silicon Carbide Schottky Diode

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Preliminary data
SDP10S30, SDB10S30
SDT10S30
Silicon Carbide Schottky Diode
 Revolutionary semiconductor
material - Silicon Carbide
 Switching behavior benchmark
 No reverse recovery
www.DataSheet4UN.coomtemperature influence on
the switching behavior
 No forward recovery
P-TO220-2-2.
Product Summary
VRRM
300
Qc 23
IF 10
V
nC
A
P-TO220-3.SMD P-TO220-3-1.
Type
SDP10S30
SDB10S30
SDT10S30
Package
P-TO220-3-1.
Ordering Code
Q67040-S4372
P-TO220-3.SMD Q67040-S4373
P-TO220-2-2. Q67040-S4447
Marking
D10S30
D10S30
D10S30
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
IFRM
IFMAX
i2 dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
Operating and storage temperature
VRSM
Ptot
Tj , Tstg
Pin 1
n.c.
n.c.
C
PIN 2
C
C
A
Value
10
14
36
45
100
6.5
300
300
65
-55... +175
PIN 3
A
A
Unit
A
A²s
V
W
°C
Page 1
2001-12-04


Infineon Technologies Electronic Components Datasheet

SDT10S30 Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Thermal Characteristics
Parameter
Preliminary data
Symbol
Characteristics
Thermal resistance, junction - case
www.DataSheeSt4UM.cDomversion, device on PCB:
P-TO263-3-2: @ min. footprint
P-TO263-3-2: @ 6 cm2 cooling area 1)
RthJC
RthJA
SDP10S30, SDB10S30
SDT10S30
Values
Unit
min. typ. max.
- - 2.3 K/W
- - 62
- 35 -
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Diode forward voltage
IF=10A, Tj=25°C
IF=10A, Tj=150°C
VF
- 1.5 1.7
- 1.5 1.9
Reverse current
VR=300V, Tj=25°C
VR=300V, Tj=150°C
IR
- 15 200
- 20 1000
Unit
V
µA
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2001-12-04


Part Number SDT10S30
Description Silicon Carbide Schottky Diode
Maker Infineon Technologies
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