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Infineon Technologies Electronic Components Datasheet

SDT10S60 Datasheet

Silicon Carbide Schottky Diode

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Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
www.DataSheet4UN.coomreverse recovery
No temperature influence on
the switching behavior
No forward recovery
SDT10S60
thinQ!SiC Schottky Diode
Product Summary
VRRM
600
Qc 29
IF 10
V
nC
A
P-TO220-2-2.
Type
SDT10S60
Package
P-TO220-2-2.
Ordering Code
Q67040S4643
Marking Pin 1 Pin 2
D10S60 C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
IFRM
IFMAX
i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
Operating and storage temperature
VRSM
Ptot
Tj , Tstg
Value
10
14.1
31
39
100
4.8
600
600
75
-55... +175
Unit
A
A²s
V
W
°C
Rev. 2.0
Page 1
2004-03-18


Infineon Technologies Electronic Components Datasheet

SDT10S60 Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
www.DataSheeTt4hUe.cormm al resistance, junction - ambient, leaded
SDT10S60
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
- - 2 K/W
- - 62
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Diode forward voltage
IF=10A, Tj=25°C
IF=10A, Tj=150°C
VF
- 1.5 1.7
- 1.7 2.1
Reverse current
VR=600V, Tj=25°C
VR=600V, Tj=150°C
IR
- 34 350
- 85 1500
Unit
V
µA
Rev. 2.0
Page 2
2004-03-18


Part Number SDT10S60
Description Silicon Carbide Schottky Diode
Maker Infineon Technologies
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