SDT10S30
SDT10S30 is Silicon Carbide Schottky Diode manufactured by Infineon.
Preliminary data
SDP10S30, SDB10S30 SDT10S30
Silicon Carbide Schottky Diode
Revolutionary semiconductor material
- Silicon Carbide
Switching behavior benchmark No reverse recovery
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Product Summary V VRRM 300 Qc IF
P-TO220-2-2. P-TO220-3.SMD
23 10
P-TO220-3-1. n C A
No temperature influence on the switching behavior
No forward recovery
Type SDP10S30 SDB10S30 SDT10S30
Package P-TO220-3-1. P-TO220-2-2.
Ordering Code Q67040-S4372 Q67040-S4447
Marking D10S30 D10S30 D10S30
Pin 1 n.c. n.c.
PIN 2 C C
PIN 3 A A
P-TO220-3.SMD Q67040-S4373
Value 10 14 36 45 100 6.5 300 300 65
Unit A
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz
TC=25°C, tp =10ms
Symbol IF IFRMS
Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
IFRM...
