SDT10S60
SDT10S60 is Silicon Carbide Schottky Diode manufactured by Infineon.
Silicon Carbide Schottky Diode
- Worlds first 600V Schottky diode
- Revolutionary semiconductor material
- Silicon Carbide
- Switching behavior benchmark
.. thin Q! Si C Schottky Diode
Product Summary VRRM Qc IF 600 29 10
P-TO220-2-2.
V n C A
- No reverse recovery
- No temperature influence on the switching behavior
- No forward recovery
Type SDT10S60
Package P-TO220-2-2.
Ordering Code Q67040S4643
Marking D10S60
Pin 1
Pin 2
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz
TC=25°C, tp=10ms
Symbol IF IFRMS
Value 10 14.1 31 39 100 4.8 600 600 75 -55... +175
Unit A
Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
IFRM IFMAX ∫i2dt VRRM VRSM Ptot Tj , Tstg
Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature
A²s V W °C
Rev. 2.0
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