SIGC12T120
SIGC12T120 is IGBT manufactured by Infineon.
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IGBT Chip
Features
:
- 1200V Trench & Field Stop technology
- low turn-off losses
- short tail current
- positive temperature coefficient
- easy paralleling
This chip is used for:
- power module
Applications:
- drives
Chip Type SIGC12T120
VCE 1200V
ICn 8A
Die Size 3.54 x 3.5 mm2
Package sawn on foil
Ordering Code Q67050A4102-A001
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Remended Storage Environment 3.54 x 3.5 2.028 x 2.028...